Characterization of the ferroelectric phase transition in monolayer In<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e975" altimg="si51.svg"><mml:msub><mml:mrow /><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math>Se<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e983" altimg="si52.svg"><mml:msub><mml:mrow /><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:math> grown on bilayer graphene-Reference-Cited by-同舟云学术

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Characterization of the ferroelectric phase transition in monolayer In2Se3 grown on bilayer graphene

Published:2022-10 Issue: Volume:600 Page:154032
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Matetskiy A.V.^ORCID,Mararov V.V.,Denisov N.V.,Nguyen D.L.^ORCID,Hsing C.R.^ORCID,Wei C.M.,Zotov A.V.,Saranin A.A.

Funder

Ministry of Science and Technology, Taiwan

Russian Science Foundation

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference32 articles.

1. Electrons and phonons in single layers of hexagonal indium chalcogenides from ab initio calculations;Zólyomi;Phys. Rev. B,2014

2. Transition from parabolic to ring-shaped valence band maximum in few-layer GaS, GaSe, and InSe;Rybkovskiy;Phys. Rev. B,2014

3. Band structure and optical transitions in atomic layers of hexagonal gallium chalcogenides;Zólyomi;Phys. Rev. B,2013

4. Ab initio study of carrier mobility of few-layer inse;Sun;Appl. Phys. Express,2016

5. Thickness-dependent transition of the valence band shape from parabolic to Mexican-hat-like in the MBE grown InSe ultrathin films;Kibirev;Appl. Phys. Lett.,2018

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial β–In2Se3 Thin Films;Nanomaterials;2023-05-03

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