Investigating the strain controlled epitaxial growth of Mn3Ge films through thickness modulation-Reference-Cited by-同舟云学术

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Investigating the strain controlled epitaxial growth of Mn3Ge films through thickness modulation

Published:2022-11 Issue: Volume:602 Page:154247
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Wang Xiaolei,Cui Shuainan,Yang Qianqian,Ma Lin,Xu Jiao,Xu Guoliang,Shang Zixuan,Liu Danmin,Zhao Jinliang,Deng Jinxiang,Zhai Tianrui,Hou Zhipeng

Funder

National Natural Science Foundation of China

Guangzhou Science and Technology Program key projects

National Key Research and Development Program of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference41 articles.

1. Current-induced magnetization switching in atom thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance;Wang;Nat. Commun.,2018

2. Nanoscale domain wall devices with magnetic tunnel junction read and write;Raymenants;Nat. Electron.,2021

3. Opportunities and challenges for spintronics in the microelectronics industry;Dieny;Nat. Electron.,2020

4. Magnetic memory driven by topological insulators;Wu;Nat. commun.,2021

5. Spin–orbit torque switching in a T-type magnetic configuration with current orthogonal to easy axes;Kong;Nat. Commun.,2019

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