Effect of laser annealing on crystallinity of the Si layers in Si/SiO2 multiple quantum wells-Reference-Cited by-同舟云学术

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Effect of laser annealing on crystallinity of the Si layers in Si/SiO2 multiple quantum wells

Published:2007-12 Issue:4 Volume:254 Page:1083-1086
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Arguirov T.,Mchedlidze T.,Akhmetov V.D.,Kouteva-Arguirova S.,Kittler M.,Rölver R.,Berghoff B.,Först M.,Bätzner D.L.,Spangenberg B.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Will silicon be the photonic material of the third millenium? *

3. Influence of excitonic singlet-triplet splitting on the photoluminescence of Si∕SiO2 multiple quantum wells fabricated by remote plasma-enhanced chemical-vapor deposition

4. Visible light emission from single layer Si nanodots fabricated by laser irradiation method

5. Continuous-wave laser annealing of free-standing Si∕SiO2 superlattice: Modification of optical, structural, and light-emitting properties

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