High rate dry etching of (BiSb)2Te3 film by CH4/H2-based plasma-Reference-Cited by-同舟云学术

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High rate dry etching of (BiSb)2Te3 film by CH4/H2-based plasma

Published:2014-10 Issue: Volume:317 Page:457-461
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Song Junqiang,Shi Xun,Chen Lidong

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Shanghai Municipal Natural Science Foundation

Strategic Priority Research Program on Space Science of the Chinese Academy of Sciences

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference21 articles.

1. Thermoelectric microdevice fabricated by a MEMS-like electrochemical process

2. Fabrication and measured performance of a first-generation microthermoelectric cooler

3. On-chip array of thermoelectric Peltier microcoolers

4. On-chip cooling by superlattice-based thin-film thermoelectrics

5. Fabrication and characterization of bismuth–telluride-based alloy thin film thermoelectric generators by flash evaporation method

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pressure-Dependent Etching Mechanism and Induced Dielectric Properties Variation of BZN Thin Films in SF6/Ar Plasma;Plasma Chemistry and Plasma Processing;2015-08-06

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