Study of n+ type porous GaAs by photoluminescence spectroscopy: Effect of the etching time on the deep levels-Reference-Cited by-同舟云学术

Study of n+ type porous GaAs by photoluminescence spectroscopy: Effect of the etching time on the deep levels

Published:2010-08 Issue:20 Volume:256 Page:5946-5951
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Abdellaoui T.,Daoudi M.,Bardaoui A.,Chtourou R.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference18 articles.

1. Fröhlich modes in porous III–V semiconductors;Sarua;J. Phys.: Condens. Mat.,2001

2. Formation of porous gas by pulsed current electrochemical anodization: SEM, XRD, Raman, and photoluminescence studies;Ali;Electrochem. Solid-State Lett.,2009

3. Correlation of Raman and photoluminescence spectra of electrochemically prepared n-type porous GaAs;Ali;Semicond. Sci. Technol.,2008

4. Time resolved blue and ultraviolet photoluminescence in porous GaP;Anedda;Appl. Phys. Lett.,1995

5. The origin of blue and ultraviolet emission from porous GaP;Meijerink;Appl. Phys. Lett.,1996

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MeV-Fe ions implantation of GaAs – Induced morphological and structural modification of porous GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-04

2. Structural and optical properties of electrochemically etched p+-type GaAs surfaces: influence of HF presence in the etching electrolyte;Journal of Materials Science: Materials in Electronics;2017-07-27

3. Novel optical and structural properties of porous GaAs formed by anodic etching of n+-GaAs in a HF:C2H5OH:HCl:H2O2:H2O electrolyte: effect of etching time;Journal of Materials Science: Materials in Electronics;2013-01-31