Noble gas ion effects on the XPS valence band spectra of silicon-Reference-Cited by-同舟云学术

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Noble gas ion effects on the XPS valence band spectra of silicon

Published:2004-01 Issue:1-4 Volume:222 Page:13-16
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Walker Elaine,Lund Christopher P.,Jennings Philip,Cornish John C.L.,Klauber Craig,Hefter Glenn

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference18 articles.

1. Radiation damage in silicon (001) due to low energy (60–510 eV) argon ion bombardment

2. Characterisation of argon-ion-bombarded and chemically etched Y1Ba2Cu3O7−δ single crystal surfaces

3. Thermal equilibration in electronic structure of hydrogenated amorphous silicon

4. Experimental elucidation of hydrogen local density of states in hydrogenated amorphous silicon

5. Metastability and microstructural changes in hydrogenated amorphous silicon

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1. Identification of the different oxidation states of iron by using a formaldehyde clock system;Microchemical Journal;2023-02

2. Investigation of nanostructural and electronic properties of silicides intermetallic in Mo/Si interfaces of periodic multilayers and bilayer structures;Bulletin of Materials Science;2023-01-31

3. Laser writing of nanostructured silicon arrays for the SERS detection of biomolecules with inhibited oxidation;Colloids and Surfaces B: Biointerfaces;2019-02

4. Spectral artefacts post sputter-etching and how to cope with them – A case study of XPS on nitride-based coatings using monoatomic and cluster ion beams;Applied Surface Science;2018-06

5. Challenges in the characterization of plasma polymers using XPS;Journal of Electron Spectroscopy and Related Phenomena;2015-04

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