Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments-Reference-Cited by-同舟云学术

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Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments

Published:2004-03 Issue:1-4 Volume:224 Page:152-155
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lee S.W,Chen L.J,Chen P.S,Tsai M.-J,Liu C.W,Chen W.Y,Hsu T.M

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference17 articles.

1. Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

2. Optical properties of Ge self-organized quantum dots in Si

3. Effects of interdiffusion on the band alignment of GeSi dots

4. B.-C. Hsu, S.T. Chang, C.-R. Shie, C.-C. Lai, P.S. Chen, C.W. Liu, IEDM, 2002, p. 91.

5. Size distribution and electroluminescence of self-assembled Ge dots

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1. Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography;Nanoscale Research Letters;2013-08-08

2. Preparation and the Blood Compatibility of Titanium Oxide Nanorod Arrays;Advanced Materials Research;2011-08

3. Greatly Improved Blood Compatibility by Microscopic Multiscale Design of Surface Architectures;Small;2009-10-02

4. Growth of Ge quantum dots on Si(100)‐(2×1) by pulsed laser deposition;Journal of Applied Physics;2006-03

5. Pyramid-Shaped Si/Ge Superlattice Quantum Dots with Enhanced Photoluminescence Properties;Advanced Materials;2006-02-03

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