A comprehensive study of the TiN/Si interface by X-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

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A comprehensive study of the TiN/Si interface by X-ray photoelectron spectroscopy

Published:2018-08 Issue: Volume:448 Page:502-509
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Antunes V.G.,Figueroa C.A.,Alvarez F.

Funder

FundaÃ§Ã£o de Amparo Ã Pesquisa do Estado de SÃ£o Paulo

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference35 articles.

1. Low grain size TiN thin films obtained by low energy ion beam assisted deposition;López;Appl. Surf. Sci.,2001

2. Structure, electrical and optical properties of TiNx films by atmospheric pressure chemical vapor deposition;Duan;Appl. Surf. Sci.,2011

3. X-ray photoelectron study of TiN/SiO2 and TiN/Si interfaces;Chourasia;Thin Solid Films.,1995

4. Characterisation of TiN coatings and of the TiN/Si interface by X-ray photoelectron spectroscopy and Auger electron spectroscopy;Jouan;Appl. Surf. Sci.,1993

5. Nanostructured tantalum nitride fi lms as buffer-layer for carbon nanotube growth;Jin;Thin Solid Films,2011

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