Two-dimensional HfCr2N4 semiconductor with intrinsic room-temperature ferromagnetism and enhanced conductivity via electrostatic doping-Reference-Cited by-同舟云学术

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Two-dimensional HfCr2N4 semiconductor with intrinsic room-temperature ferromagnetism and enhanced conductivity via electrostatic doping

Published:2024-04 Issue: Volume:653 Page:159128
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zhang Dingwen^ORCID,Su Meng^ORCID,Zhang Jingwen^ORCID,Ye Haoshen,Wang Jianli^ORCID

Publisher

Elsevier BV

Reference55 articles.

1. Spintronics: A spin-based electronics vision for the future;Wolf;Science,2001

2. Spintronics: Fundamentals and applications;Žutić;Rev. Modern Phys.,2004

3. Absence of ferromagnetism or antiferromagnetism in one- or two-dimensional isotropic Heisenberg models;Mermin;Phys. Rev. Lett.,1966

4. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit;Huang;Nature,2017

5. Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals;Gong;Nature,2017

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ferroelectrically controlled electromagnetic and transport properties of VN₂H₂/Al₂O₃ van der Waals multiferroic heterostructures;Nanoscale;2024

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