Reversible, long-term passivation of Ge(001) by a Ba-induced incorporated phase-Reference-Cited by-同舟云学术

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Reversible, long-term passivation of Ge(001) by a Ba-induced incorporated phase

Published:2017-10 Issue: Volume:419 Page:305-310
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Koczorowski W.,Grzela T.,Puchalska A.,Jurczyszyn L.,Czajka R.,Radny M.W.

Funder

Polish National Science Centre

Polish Ministry of Science and Higher Education

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference34 articles.

1. Germanium-Based Technologies: From Materials to Devices;Claeys,2007

2. P-Channel Germanium FinFET Based on Rapid Melt Growth

3. Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process

4. Impact of germanium surface passivation on the leakage current of shallow planar p–n junctions

5. Challenges and opportunities in advanced Ge pMOSFETs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stable bismuth sub-monolayer termination of Bi2Se3;Applied Surface Science;2019-05

2. Higher order reconstructions of the Ge(001) surface induced by a Ba layer;Applied Surface Science;2018-03

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