Pulsed laser deposition of InP thin films on sapphire(1000) and GaAs(100)-Reference-Cited by-同舟云学术

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Pulsed laser deposition of InP thin films on sapphire(1000) and GaAs(100)

Published:2004-06 Issue:1-4 Volume:233 Page:42-50
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Hafez M.A,Elamrawi K.A,Elsayed-Ali H.E

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference29 articles.

1. Manufacturability and reliability of InP HEMTs

2. Surface modification of III-V compound semiconductors using surface electromagnetic wave etching induced by ultraviolet lasers

3. Metalorganic vapor-phase epitaxy (MOVPE) growth of InGaAsP multiple-quantum-well distributed feedback lasers on InP corrugated substrate

4. X-ray photoelectron spectroscopic study of KrF excimer laser nitrided InP surface

5. Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy

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1. Thermoelectric properties of Ca3Co4O9 and Ca2.8Bi0.2Co4O9 thin films in their island formation mode;Journal of Materials Research;2013-06-17

2. Polycrystalline indium phosphide on silicon using a simple chemical route;Journal of Applied Physics;2013-03-07

3. Indium growth on Si(100)-2×1 by femtosecond pulsed laser deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2005-11

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