Scanning tunneling microscopy investigations of silicon carbide nanowires-Reference-Cited by-同舟云学术

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Scanning tunneling microscopy investigations of silicon carbide nanowires

Published:2008-05 Issue:14 Volume:254 Page:4268-4272
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Busiakiewicz A.,Klusek Z.,Huczko A.,Kowalczyk P.J.,Dąbrowski P.,Kozłowski W.,Cudziło S.,Datta P.K.,Olejniczak W.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference25 articles.

1. Silicon carbide nanowires under external loads: An atomistic simulation study

2. Nanomechanical Behavior of β-SiC Nanowire in Tension: Molecular Dynamics Simulations

3. Measuring the Young's modulus of solid nanowires byin situTEM

4. Electronic and structural properties of silicon carbide nanowires

5. Low-dimensional SiC nanostructures: Fabrication, luminescence, and electrical properties

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2. Combustion synthesis of zero-, one-, two- and three-dimensional nanostructures: Current trends and future perspectives;Progress in Energy and Combustion Science;2017-11

3. Post-synthesis treatment of silicon carbide nanowires obtained in combustion synthesis;Materials Science in Semiconductor Processing;2016-02

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