Oxidizing annealing effects on VO 2 films with different microstructures-Reference-Cited by-同舟云学术

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Oxidizing annealing effects on VO 2 films with different microstructures

Published:2015-08 Issue: Volume:345 Page:232-237
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Dou Yan-Kun,Li Jing-Bo,Cao Mao-Sheng,Su De-Zhi,Rehman Fida,Zhang Jia-Song,Jin Hai-Bo

Funder

National Natural Science Foundation of China

National High Technology Research and Development Program of China

Key Project of Chinese Ministry of Education

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference34 articles.

1. Direct in situ observation of structural transition driven actuation in VO2 utilizing electron transparent cantilevers;Viswanath;Nanoscale,2013

2. Oxide which show a metal-to-insulator transition at the neel temperature;Morin;Phys. Rev. Lett.,1959

3. Formation and characterization of grain-oriented VO2 thin films;de Natale;J. Appl. Phys.,1989

4. Collective bulk carrier delocalization driven by electrostatic surface charge accumulation;Nakano;Nature,2012

5. Preparation and investigation of sputtered vanadium dioxide films with large phase-transition hysteresis loops;Zhang;Appl. Surf. Sci.,2013

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