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Experimental evidence of the generation of gaseous SiO as precursor for the growth of SiO nanowires

  • Published:2015-08 Issue: Volume:345 Page:44-48
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Gomez-Martinez A.,Marquez F.,Morant C.

Funder

MICINN of Spain

US DoE

University of Madrid

Spanish Ministry of Education and Science

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference24 articles.

1. The vapor-liquid-solid mechanism of crystal growth and its application to silicon;Wagner;Trans. Metall. Soc. AIME,1965

2. Preferential interface nucleation: an expansion of the VLS growth mechanism for nanowires;Wacaser;Adv. Mater.,2009

3. Vapor-liquid-solid growth of Si nanowires: A kinetic analysis;Shakthivel;J. Appl. Phys.,2012

4. Growth of amorphous silicon nanowires via a solid-liquid-solid mechanism;Yan;Chem. Phys. Lett.,2000

5. Controlled growth of oriented amorphous silicon nanowires via a solid-liquid-solid (SLS) mechanism;Yu;Physica E,2001

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