Enhanced terahertz emission from GaAs substrates deposited with aluminum nitride films caused by high interface electric fields-Reference-Cited by-同舟云学术

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Enhanced terahertz emission from GaAs substrates deposited with aluminum nitride films caused by high interface electric fields

Published:2014-06 Issue: Volume:303 Page:241-244
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Jaculbia R.B.,Balgos M.H.M.,Mangila N.S.,Tumanguil M.A.C.,Estacio E.S.,Salvador A.A.,Somintac A.S.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference20 articles.

1. Excitation wavelength dependence of terahertz emission from semiconductor surface

2. Enhanced terahertz emission by coherent optical absorption in ultrathin semiconductor films on metals

3. Enhancement of terahertz electromagnetic wave emission from an undoped GaAs∕n-type GaAs epitaxial layer structure

4. Study of terahertz radiation from InAs and InSb

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1. Terahertz radiation enhancement in photoconductive antennas with embedded split-ring resonators;Chinese Optics Letters;2020

2. Temperature dependence of THz emission and junction electric field of GaAs–AlGaAs modulation-doped heterostructures with different i-AlGaAs spacer layer thicknesses;Journal of Materials Science: Materials in Electronics;2018-03-15

3. Multiple Photoconductive Antennas Terahertz Power Synthesis Technology Based on Time-Domain Waveform Consistency;IEEE Photonics Journal;2017-02

4. Enhanced Terahertz Emission from CuxO/Metal Thin Film Deposited on Columnar-Structured Porous Silicon;Bulletin of the Chemical Society of Japan;2015-10-15

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