The effects of grain boundary scattering on electrical resistivity of Ag/NiSi silicide films formed on silicon substrate at 500 °C by RTA
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference36 articles.
1. Silicides for VLSI Application;Murarka,1983
2. VLSI Electronic Microstructures Science, 6;Nicolet,1983
3. Spectroscopic ellipsometry investigation of nickel silicide formation by rapid thermal process
4. Transition metal silicides in silicon technology
5. Silicides and ohmic contacts
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