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The optimization of incident angles of low-energy oxygen ion beams for increasing sputtering rate on silicon samples

  • Published:2008-12 Issue:4 Volume:255 Page:1357-1359
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Sasaki T.,Yoshida N.,Takahashi M.,Tomita M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evolution mechanism of surface roughness during ion beam sputtering of fused silica;Applied Optics;2018-07-02

2. Dual-beam versus single-beam depth profiling: Same sample in same instrument;Rapid Communications in Mass Spectrometry;2013-11-11

3. Mass Spectrometry in Semiconductor Research;Mass Spectrometry Handbook;2012-05-21

4. Investigation of the factors determining the SIMS depth resolution in silicon-isotope multiple layers;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-01

5. Development of resonance-enhanced multiphoton ionization SNMS for state-selective detection of sputtered atoms under low-energy ion irradiation;Surface and Interface Analysis;2011-01-26
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