Influence of growth temperature of TiO2 buffer on structure and PL properties of ZnO films-Reference-Cited by-同舟云学术

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Influence of growth temperature of TiO2 buffer on structure and PL properties of ZnO films

Published:2010-05 Issue:14 Volume:256 Page:4423-4425
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zhang Weiying,Zhao Jianguo,Liu Zhenzhong,Liu Zhaojun,Fu Zhuxi

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference21 articles.

1. ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers

2. Room temperature p-n ZnO blue-violet light-emitting diodes

3. Simultaneous formation of visible and ultraviolet random lasings in ZnO films

4. RETRACTED: Recent progress in processing and properties of ZnO

5. A comprehensive review of ZnO materials and devices

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