Control of nucleation site density of GaN nanowires-Reference-Cited by-同舟云学术

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Control of nucleation site density of GaN nanowires

Published:2007-01 Issue:6 Volume:253 Page:3196-3200
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chang Chih-Yang,Pearton S.J.,Huang Ping-Jung,Chi Gou-Chung,Wang Hung-Ta,Chen Jau-Juin,Ren F.,Chen Kuei-Hsien,Chen Li-Chyong

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference21 articles.

1. Logic Gates and Computation from Assembled Nanowire Building Blocks

2. Catalytic Growth and Characterization of Gallium Nitride Nanowires

3. Direct Observation of Vapor−Liquid−Solid Nanowire Growth

4. Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gallium nitride nanostructures: Synthesis, characterization and applications;Journal of Crystal Growth;2016-06

2. Comparative optical spectroscopy of gallium-nitride and aluminum-nitride nanostructures deposited onto silicon substrate;Optik;2016-05

3. ZnO:Ga nanowires with low turn-on field for field-emission lighting;Applied Surface Science;2015-11

4. Synthesis and optical nondestructive evaluation of GaN nanorods on silicon surfaces with gold catalyst;Optik;2014-10

5. Influence of reaction conditions on the growth of GaN rods in an ammono-CVD reactor;Journal of Crystal Growth;2011-03

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