Characterization and optimization of MIS-HEMTs device of high~k dielectric material on quaternary barrier of Al0.42ln0.03Ga0.55N/UID-AIN/GaN/GaN heterostructure for high power switching application-Reference-Cited by-同舟云学术

Characterization and optimization of MIS-HEMTs device of high~k dielectric material on quaternary barrier of Al0.42ln0.03Ga0.55N/UID-AIN/GaN/GaN heterostructure for high power switching application

Published:2019-09 Issue: Volume:488 Page:427-433
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Tarauni Yusuf U.,Thiruvadigal D. John,Joseph H. Bijo

Funder

SRM Institute of Science & Technology, Chennai, India

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference21 articles.

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2. Reliability and failure analysis in power GaN-HEMTs: an overview;Meneghini;IEEE Electron Device Letters,2017

3. G. Menegheso, M. Meneghini, I. Rossetto, E. Canato and J. Bartholomeus: GaN HEMTs with p-GaN gate: field- and time-dependent degradation, Proc of SPIE. 10104(2017) 1010419-8.

4. Normally-off AlGaN/GaN HFET with p-type GaN gate and AlGaN buffer;Hilt,2017

5. Improvement of power performance of GaN HEMT by using quaternary InAlGaN barrier;Wang;Journal of the Electron Device Society,2018

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