Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodes
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference40 articles.
1. Physics and Chemistry of III-V Compound Semiconductor Interfaces;Williams,1985
2. Metal–Semiconductor Contacts;Rhoderick,1988
3. Binding and formation energies of native defect pairs in GaAs
4. On the relationship between interfacial defects and Schottky barrier height in Ag, Au, and Al/n‐GaAs contacts
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