X-ray photoelectron spectroscopy characterization of oxidated Si particles formed by pulsed ion-beam ablation-Reference-Cited by-同舟云学术

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X-ray photoelectron spectroscopy characterization of oxidated Si particles formed by pulsed ion-beam ablation

Published:2006-06 Issue:16 Volume:252 Page:5776-5782
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zhu X.P.,Yukawa Tomiyuki,Hirai Makoto,Suematsu Hisayuki,Jiang Weihua,Yatsui Kiyoshi,Nishiyama H.,Inoue Y.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference17 articles.

1. Silicon-based visible light-emitting devices integrated into microelectronic circuits

2. Blue luminescence from Si+‐implanted SiO2 films thermally grown on crystalline silicon

3. Electroluminescence of monodispersed silicon nanocrystallites synthesized by pulsed laser ablation in inert background gas

4. Fabrication and quantum properties of nanostructured silicon

5. Preparation of polycrystalline silicon thin films by pulsed ion-beam evaporation

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