MoO 3 trapping layers with CF 4 plasma treatment in flash memory applications-Reference-Cited by-同舟云学术

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MoO 3 trapping layers with CF 4 plasma treatment in flash memory applications

Published:2014-11 Issue: Volume:320 Page:379-382
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kao Chuyan Haur,Chen Hsiang,Chen Su-Zhien,Chen Chian Yu,Lo Kuang-Yu,Lin Chun Han

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference20 articles.

1. A floating gate and its application to memory devices;Kahng;IEEE Trans. Electron Devices,1967

2. High-performance nonvolatile HfO2 nanocrystal memory;Lin;IEEE Electron Device Lett.,2005

3. Nonvolatile memory using Al2O3 film with an embedded Al-rich layer;Nakata;Appl. Phys. Lett.,2005

4. Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation;Tan;IEEE Trans. Electron Devices,2006

5. Electrical and material characterization of tantalum pentoxide (Ta2O5) charge trapping layer memory;Chen;Appl. Surf. Sci.,2011

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly Photoluminescent Molybdenum Oxide Quantum Dots: One-Pot Synthesis and Application in 2,4,6-Trinitrotoluene Determination;ACS Applied Materials & Interfaces;2016-03-15

2. Model based precise analysis of the injection currents in Al/ZrO2/Al2O3/ZrO2/SiO2/Si structures for use in charge trapping non-volatile memory devices;MAT SCI SEMICON PROC;2016

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