Effect of TaN intermediate layer on the back contact reaction of sputter-deposited Cu poor Cu2ZnSnS4 and Mo-Reference-Cited by-同舟云学术

Effect of TaN intermediate layer on the back contact reaction of sputter-deposited Cu poor Cu2ZnSnS4 and Mo

Published:2019-03 Issue: Volume:471 Page:277-288
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zhuk Siarhei,Wong Terence Kin Shun,Tyukalova Elizaveta,Guchhait Asim,Seng Debbie Hwee Leng,Tripathy Sudhiranjan,Wong Ten It,Sharma Mohit,Medina Henry,Duchamp Martial,Wong Lydia Helena,Dalapati Goutam Kumar

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference42 articles.

1. The current status and future prospects of kesterite solar cells: a brief review

2. Strategic review of interface carrier recombination in earth abundant Cu–Zn–Sn–S–Se solar cells: current challenges and future prospects

3. Beyond 11% Efficient Sulfide Kesterite Cu2ZnxCd1–xSnS4 Solar Cell: Effects of Cadmium Alloying

4. Reducing the interfacial defect density of CZTSSe solar cells by Mn substitution

5. Copper indium gallium selenide based solar cells – a review

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