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Dependence of InGaZnO and SnO2 thin film stacking sequence for the resistive switching characteristics of conductive bridge memory devices

  • Published:2020-09 Issue: Volume:525 Page:146390
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Ali Asif,Abbas Yawar,Abbas Haider,Jeon Yu-Rim,Hussain Sajjad,Naqvi Bilal Abbas,Choi Changhwan,Jung Jongwan

Funder

Ministry of science, ICT & Future Planning

MOTIE

KSRC

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference45 articles.

1. C. An, et al., in: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, pp. 746–749.

2. A floating gate and its application to memory devices;Kahng;Bell Syst. Tech. J.,1967

3. J. Kim, et al., in: 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, pp. 554–557.

4. An overview of resistive random access memory devices;Li;Chinese Sci. Bull.,2011

5. Nonvolatile multilevel memory effect in Cu/WO3/Pt device structures. physica status solidi (RRL)–Rapid;Li;Res. Lett.,2010
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