Type-II band alignment AlN/InSe van der Waals heterostructure: Vertical strain and external electric field-Reference-Cited by-同舟云学术

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Type-II band alignment AlN/InSe van der Waals heterostructure: Vertical strain and external electric field

Published:2020-10 Issue: Volume:528 Page:146782
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zhang Ru,Zhang Yan,Wei Xing,Guo Tingting,Fan Jibin,Ni Lei,Weng Yijun,Zha Zhengdi,Liu Jian,Tian Ye,Li Ting,Duan Li

Funder

National Key R&D Program of China

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference64 articles.

1. First-principles study on transition-metal dichalcogenide/BSe van der waals heterostructures: a promising water-splitting photocatalyst;Luo;J. Phys. Chem. C,2019

2. Evidence of a graphene-like Sn-sheet on a Au (111) substrate: electronic structure and transport properties from first principles calculations;Nigam;Phys. Chem. Chem. Phys.,2015

3. Origin of High photocatalytic efficiency in monolayer g-C3N4/CdS heterostructure: a hybrid DFT study;Liu;J. Phys. Chem. C,2015

4. Band alignment tuning in GeS/arsenene staggered heterostructures;Fang;J. Alloys Compd.,2019

5. Band alignment and optical features in Janus-MoSeTe/X(OH)2 (X = Ca, Mg) van der Waals heterostructures;Vo;Phys. Chem. Chem. Phys.,2019

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1. A Type-II InP/MoTe2 van der waals heterostructure with adjustable electronic properties under external electric field and biaxial strain;Physics Letters A;2024-10

2. Exploring electronic characteristics of bilayer HfS2 under mechanical strain and external electric field: A first-principles approach;Chinese Journal of Physics;2024-06

3. Exploring electronic features in monolayer and bilayer MX2 (M = Hf, Zr; X = S, Se) structures under shear strain;Materials Today Communications;2024-06

4. Strain and Electric Field Engineering of G-ZnO/SnXY (X, Y = S, Se) S-Scheme Heterostructures for Photocatalyst and Electronic Device Applications: A Hybrid DFT Calculation;ACS Applied Materials & Interfaces;2024-05-16

5. Tunable Electronic and Optical Properties of MoGe2N4/AlN and MoSiGeN4/AlN van der Waals Heterostructures toward Optoelectronic and Photocatalytic Applications;Coatings;2024-04-18

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