Author:
Grodzicki M.,Moszak K.,Hommel D.,Bell G.R.
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference42 articles.
1. High Power High Frequency Transistors: A Material’s Perspective;Coffie,2020
2. GaN Technology for Power Electronic Applications: A Review;Flack;J. Elec Mater.,2016
3. GaN based heterostructure for high power devices;Asif Khan;Solid-State Electron.,1997
4. K. Son, A. Liao, G. Lung, M. Gallegos, T. Hatake, R.D. Harris, L.Z. Scheick, W.D. Smythe, GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments, (2010). https://doi.org/info:doi/10.1166/nnl.2010.1063.
5. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations;Lee;Sci. Rep.,2016
Cited by
13 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献