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Cu2+ cation-exchange in ZnxCd1-xS thin films for neuromorphic devices

  • Published:2021-01 Issue: Volume:537 Page:147921
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Boratto Miguel H.,Linhares Alexandro A.,Congiu Mirko,Batagin-Neto Augusto,Pla-Cid Cristiani C.,Pasa André A.,Graeff Carlos F.O.

Funder

FAPESP

CAPES

LCME

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference26 articles.

1. A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing;Van De Burgt;Nat. Mater.,2017

2. Neuromorphic device architectures with global connectivity through electrolyte gating;Gkoupidenis;Nat. Commun.,2017

3. A synaptic electrochemical memristor based on the Cu 2+ /Zn 2+ cation exchange in Zn:CdS thin films;Congiu;ChemistrySelect.,2018

4. Ion-exchange synthesis and enhanced visible-light photoactivity of CuS/ZnS nanocomposite hollow spheres;Yu;J. Phys. Chem. C,2010

5. Synthesis of porous ZnS: Ag 2 S nanosheets by ion exchange for photocatalytic H 2 generation;Yang;ACS Appl. Mater. Interfaces,2014
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