Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference29 articles.
1. Modeling of epitaxial silicon growth from the DCS-H2-HCl system in a large scale CVD reactor;Ramadan;IEEE Trans. Semicond. Manuf.,2018
2. Selective wet and dry etching of hydrogenated amorphous silicon and related materials;Haller;J. Electrochem. Soc.,1988
3. Low-temperature (850 °C) silicon selective epitaxial growth on HF-treated Si (100) substrates using SiH4-HCI-H2 systems;Miyauchi;J. Electrochem. Soc.,1991
4. Nucleation and growth of polycrystalline silicon films in an ultra high vacuum rapid thermal chemical vapor deposition reactor using disilane and hydrogen;Violette;MRS Proc.,1994
5. Precursors for group IV epitaxy for micro/opto-electronic applications;Thomas;Solid State Technol.,2009
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献