Extending the near-infrared band-edge absorption spectrum of silicon by proximity to a 2D semiconductor-Reference-Cited by-同舟云学术

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Extending the near-infrared band-edge absorption spectrum of silicon by proximity to a 2D semiconductor

Published:2021-02 Issue: Volume:538 Page:147803
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Apicella Valerio,Fasasi Teslim Ayinde,Wong Hon Fai,Leung Dennis C.W.,Ruotolo Antonio

Funder

Florida Polytechnic University

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference44 articles.

1. Limiting efficiency of silicon solar cells;Tiedje;IEEE Trans. Electron Dev.,1984

2. Reassessment of the limiting efficiency for crystalline silicon solar cells;Richter;IEEE J. Photovolt.,2013

3. Application of NaYF4: Er3+ up-converting phosphors for enhanced near-infrared silicon solar cell response;Shalav;Appl. Phys. Lett.,2005

4. Limiting efficiencies for photovoltaic energy conversion in multigap systems;Marti;Sol. Energy Mater. Sol. Cells,1996

5. Ideal efficiency of monolithic, series-connected multijunction solar cells;Tobias;Prog. Photovoltaics Res. Appl.,2002

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