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Effect of long-term stability of the aluminium nitride - silicon interface for microwave-frequency electronic devices

  • Published:2021-06 Issue: Volume:551 Page:149461
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Fiedler Holger,Leveneur Jérôme,Nancarrow Mitchell,Mitchell David R.G.,Kennedy John

Funder

Australian Research Council

Ministry of Business, Innovation and Employment

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference59 articles.

1. Piezoelectric MEMS sensors: State-of-the-art and perspectives;Tadigadapa;Meas. Sci. Technol.,2009

2. Piezoelectric properties of polycrystalline AlN thin films for MEMS application;Tonisch;Sens. Actuat. A,2006

3. Band parameters for nitrogen-containing semiconductors;Vurgaftman;J. Appl. Phys.,2003

4. Growth and applications of group III-nitrides;Ambacher;J. Phys. D Appl. Phys.,1998

5. Spontaneous polarization and piezoelectric constants of III-V nitrides;Bernardini;Phys. Rev. B – Condens. Matt. Mater. Phys.,1997
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