Reliability study on deep-ultraviolet photodetectors based on ZnGa2O4 epilayers grown by MOCVD-Reference-Cited by-同舟云学术

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Reliability study on deep-ultraviolet photodetectors based on ZnGa2O4 epilayers grown by MOCVD

Published:2021-07 Issue: Volume:555 Page:149657
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Horng Ray-Hua,Huang Peng-Hsuan,Li Yun-Sheng,Tarntair Fu-Gow,Tan Chih Shan

Funder

National Chiao Tung University

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference35 articles.

1. Thickness Effect on Operational Modes of ZnGa2O4 MOSFETs;Cheng;IEEE J. Electron Devices Soc.,2018

2. In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity;Zhuo;Nano Res.,2019

3. Synthesis of large-area 2D WS2 films and fabrication of a heterostructure for self-powered ultraviolet photodetection and imaging applications;Zhao;J. Mater. Chem. C,2019

4. A self-powered solar-blind photodetector based on a MoS2/β-Ga2O3 heterojunction;Zhuo;J. Mater. Chem. C,2018

5. High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction;Zhuo;J. Mater. Chem. C,2018

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancement-mode ZnGa2O4-based Phototransistor with high UV–visible rejection ratio grown by metalorganic chemical vapor deposition;Journal of Alloys and Compounds;2024-11

2. Study of geometry effect on the performance of thin-film transistors fabricated with ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition for high voltage applications;Materials Science in Semiconductor Processing;2024-11

3. Preparation of ZnGa2O4-based deep ultraviolet photodetector with high photodetectivity by magnetron sputtering;Vacuum;2024-06

4. Deep-ultraviolet n-ZnGa₂O₄/p-GaN heterojunction photodetector fabricated by pulsed laser deposition;Optics Letters;2024-04-19

5. Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGa₂O₄ heterojunction with high sensitivity and fast speed;Optics Express;2024-03-13

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