A comparative study on the direct deposition of μc-Si:H and plasma-induced recrystallization of a-Si:H: Insight into Si crystallization in a high-density plasma-Reference-Cited by-同舟云学术

A comparative study on the direct deposition of μc-Si:H and plasma-induced recrystallization of a-Si:H: Insight into Si crystallization in a high-density plasma

Published:2018-03 Issue: Volume:433 Page:285-291
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zhou H.P.,Xu M.,Xu S.,Feng Y.Y.,Xu L.X.,Wei D.Y.,Xiao S.Q.

Funder

AcRF Tier1

A*STAR, Singapore

National Science Foundation of China

Fundamental Research Funds for the Central Universities

Open Project of Key Laboratory of Artificial Structures & Quantum Control (Ministry of Education), Shanghai Jiao Tong University

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

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