Epitaxial growth mechanism of perovskite (1 1 1) SrTiO3 on wurtzite (0 0 0 2) GaN with single unit-cell TiN buffer layers-Reference-Cited by-同舟云学术

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Epitaxial growth mechanism of perovskite (1 1 1) SrTiO3 on wurtzite (0 0 0 2) GaN with single unit-cell TiN buffer layers

Published:2019-01 Issue: Volume:465 Page:1055-1060
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Li Guanjie,Li Xiaomin,Chen Yongbo,Jia Shasha,Xu Xiaoke

Funder

National Natural Science Foundation of China

National Key R&D Program of China

Foundation of the Shanghai Committee for Science and Technology

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference29 articles.

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2. Crystalline oxides on silicon;Reiner;Adv. Mater.,2010

3. Three-dimensional hybrid integration technology of CMOS, MEMS, and photonics circuits for optoelectronic heterogeneous integrated systems;Lee;IEEE. T. Electron Dev.,2011

4. Crystalline oxides on silicon: the first five monolayers;Mckee;Phys. Rev. Lett.,1998

5. Physical structure and inversion charge at a semiconductor interface with a crystalline oxide;Mckee;Science,2001

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