Quintuple layer Bi 2 Se 3 thin films directly grown on insulating SiO 2 using molecular beam epitaxy-Reference-Cited by-同舟云学术

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Quintuple layer Bi 2 Se 3 thin films directly grown on insulating SiO 2 using molecular beam epitaxy

Published:2014-10 Issue: Volume:316 Page:42-45
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Jeon Jeong Heum,Song Misun,Kim Howon,Jang Won-Jun,Park Ji-Yong,Yoon Seokhyun,Kahng Se-Jong

Funder

National Research Foundation

Ministry of Education Science and Technology

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference34 articles.

1. Z2Topological Order and the Quantum Spin Hall Effect

2. Topological Insulators in Three Dimensions

3. Topological field theory of time-reversal invariant insulators

4. Colloquium: Topological insulators

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4. Solvothermal Growth of Layered Bi2se3 Hexagonal Platelets: A Promising Anode Material for Lithium-Ion Batteries;2024

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