Tuning the band gap of the InSe monolayer by substitutional doping-Reference-Cited by-同舟云学术

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Tuning the band gap of the InSe monolayer by substitutional doping

Published:2022-03 Issue: Volume:579 Page:152190
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zhang Chuanchuan,Chen Xuan,Cao Biaobing,Duan Haiming,Sun Qihua,Ouyang Fangping

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference48 articles.

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2. Atomically thin MoS2: a new direct-gap semiconductor;Mak;Phys. Rev. Lett.,2010

3. Liquid exfoliation of layered materials;Nicolosi;Science.,2013

4. Black phosphorus field-effect transistors;Li;Nat. Nanotechnol.,2014

5. Recent advances in ultrathin two-dimensional nanomaterials;Tan;Chem. Rev.,2017

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1. Characteristics and performance of layered two-dimensional materials under doping engineering;Physical Chemistry Chemical Physics;2024

2. Laser Thinning of Violet Phosphorus and Quantitative Characterization of its Thickness;2024

3. Enhanced tunneling electroresistance through interfacial charge-modulated barrier in α-In₂Se₃-based ferroelectric tunnel junction;Journal of Physics: Condensed Matter;2023-12-13

4. First-principles study of electronic properties of Zn and La doped and co-doped anatase TiO2;AIP Advances;2023-12-01

5. First-principles modeling of molecular adsorption on an InSe monolayer;Emerging Materials Research;2023-12-01

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