Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001)/SiO2 interface-Reference-Cited by-同舟云学术

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Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001)/SiO2 interface

Published:2013-09 Issue: Volume:280 Page:500-503
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zheng Liu,Sun Guosheng,Zhang Feng,Liu Shengbei,Liu Bin,Dong Lin,Wang Lei,Zhao Wanshun,Liu Xingfang,Yan Guoguo,Tian Lixin,Zeng Yiping

Funder

National Natural Science Foundation of China (NSFC)

Beijing Natural Science Foundation

Youth Innovation Promotion Association

Chinese Academy of Sciences

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference25 articles.

1. Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substrates

2. Al2O3/SiO2 films prepared by electron-beam evaporation as UV antireflection coatings on 4H-SiC

3. Annealing effects on the optical and structural properties of Al2O3/SiO2 films as UV antireflection coatings on 4H-SiC substrates

4. Effect of the oxidation process on SiO2/4H-SiC interface electrical characteristics

5. Low-temperature oxidation of SiC surfaces by supercritical water oxidation

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evolution of coating layers during high-temperature annealing and their effects on magnetic behavior of Fe(Si) soft magnetic composites;Advanced Powder Technology;2022-12

2. Study of the electrical stress effect on the SiC-SiO2 interface by inelastic electron tunneling spectroscopy;Applied Surface Science;2020-04

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