Enhanced photoresponse characteristics of transistors using CVD-grown MoS2/WS2 heterostructures-Reference-Cited by-同舟云学术

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Enhanced photoresponse characteristics of transistors using CVD-grown MoS2/WS2 heterostructures

Published:2018-06 Issue: Volume:443 Page:31-38
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Shan Junjie,Li Jinhua,Chu Xueying,Xu Mingze,Jin Fangjun,Fang Xuan,Wei Zhipeng,Wang Xiaohua

Funder

“111” Project of China

National Natural Science Foundation of China

Advance Research Project of Weapon and Equipment

Project of Education Department of Jilin Province

Developing Project of Science and Technology of Jilin Province

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference44 articles.

1. Shape evolution of monolayer MoS2 crystals grown by chemical vapor deposition;Wang;Chem. Mater.,2014

2. Single- layer MoS2 transistors;Radisavljevic;Nanotechnol,2011

3. Electronics and optoelectronics of two- dimensional transition metal dichalcogenides;Wang;Nanotechnol,2012

4. Two- dimensional molybdenum trioxide and dichalcogenides;Balendhran;Adv. Funct. Mater.,2013

5. Photoelectron spectroscopic imaging and device applications of large- area patternable single- layer MoS2 synthesized by chemical vapor deposition;Park;ACS Nano,2014

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