Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 °C-Reference-Cited by-同舟云学术

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Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 °C

Published:2004-10 Issue:1-4 Volume:237 Page:134-138
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Nohira H.,Kuroiwa T.,Nakamura M.,Hirose Y.,Mitsui J.,Sakai W.,Nakajima K.,Suzuki M.,Kimura K.,Sawano K.,Nakagawa K.,Shiraki Y.,Hattori T.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference14 articles.

1. Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

2. Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures

3. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

4. A new ESCA instrument with improved surface sensitivity, fast imaging properties and excellent energy resolution

5. Monolayer analysis in Rutherford backscattering spectroscopy

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced photoconductivity of SiGe nanocrystals in SiO2 driven by mild annealing;Applied Surface Science;2019-03

2. Relation Between Oxidation Rate and Oxidation-Induced Strain at SiO2/Si(001) Interfaces during Thermal Oxidation;Japanese Journal of Applied Physics;2013-11-01

3. Angle-resolved photoelectron spectroscopy on gate insulators;Microelectronics Reliability;2007-01

4. New Approach to Highly Accurate Depth Profiling using Angle-resolved Photoelectron Spectroscopy;Hyomen Kagaku;2007

5. Thermal oxidation kinetics of an Si1−xCx alloy layer (x≃0.1) on Si(001) surfaces monitored in real time by RHEED combined with AES;Materials Science and Engineering: B;2006-12

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