Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells-Reference-Cited by-同舟云学术

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Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells

Published:2015-12 Issue: Volume:359 Page:676-678
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Fernández-Delgado N.,Herrera M.,Molina S.I.,Castro C.,Duguay S.,James J.S.,Krier A.

Funder

Spanish MINECO

Junta de Andalucía

European Union H2020 Program

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference18 articles.

1. Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells;Carrington;Phys. B (Amsterdam, Neth.),2012

2. A pulsed nonclassical light source driven by an integrated electrically triggered quantum dot microlaser;Munnelly;IEEE J. Sel. Topics Quantum Electron.,2015

3. New bidirectional intelligent semiconductor transformer for smart grid application;Han;IEEE Trans. Power Electron.,2014

4. Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE;Kelrich;Nanotechnology,2015

5. Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness;Kashtiban;Microelectron. J.,2009

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The description of charge transfer in fast negative ions scattering on water covered Si(100) surfaces;Applied Surface Science;2016-11

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