Assessment of interface roughness during plasma etching through the use of real-time ellipsometry-Reference-Cited by-同舟云学术

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Assessment of interface roughness during plasma etching through the use of real-time ellipsometry

Published:2011-01 Issue:7 Volume:257 Page:2536-2539
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Han Chien-Yuan,Lai Chien-Wen,Chao Yu-Faye,Leou Ke-Ciang,Lin Tsang-Lang

Funder

National Science Council, Taiwan

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference12 articles.

1. Comparative characterisation by atomic force microscopy and ellipsometry of soft and solid thin films

2. Influence of Interface Roughness on Silicon Oxide Thickness Measured by Ellipsometry

3. Comparison of Si surface roughness measured by atomic force microscopy and ellipsometry

4. Roughness and chemistry of silicon and polysilicon surfaces etched in high-density plasma: XPS, AFM and ellipsometry analysis

5. Using Ellipsometry for Assessment of TiN Surface Roughness after Plasma Etch

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4. MAGNETO-OPTIC FARADAY EFFECT ON SPIN ANISOTROPIC Co ULTRATHIN FILMS AND POST-NITRIDIZATION ON ZnO(002) CRYSTAL;SPIN;2012-12

5. Etching mechanisms of thin SiO2 exposed to Cl2 plasma;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-09

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