Growth and structure of Si and Ge in vanadium oxide nanomesh on Pd(111) studied by STM and DFT-Reference-Cited by-同舟云学术

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Growth and structure of Si and Ge in vanadium oxide nanomesh on Pd(111) studied by STM and DFT

Published:2013-01 Issue: Volume:265 Page:291-295
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chan Lap Hong,Hayazaki Shinji,Ogawa Kokushi,Yuhara Junji

Funder

Ministry of Education, Culture, Sports, Science and Technology (MEXT)

Toyota Physical and Chemical Research Institute

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference23 articles.

1. Self-organized formation and self-repair of a two-dimensional nanoarray of Ge quantum dots epitaxially grown on ultrathin SiO2-covered Si substrates

2. Study of growth behaviour and microstructure of epitaxially grown self-assembled Ge quantum dots on nanometer-scale patterned SiO2/Si(001) substrates

3. Molecular Electronics

4. Electronics using hybrid-molecular and mono-molecular devices

5. SINGLE-MOLECULE ELECTRICAL JUNCTIONS

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Initial-stage behaviors of tin and lead adsorption on vanadium surface oxide nanomesh on Pd(111);Surface Science;2013-07

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