Modeling of altered layer formation during reactive ion etching of GaAs-Reference-Cited by-同舟云学术

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Modeling of altered layer formation during reactive ion etching of GaAs

Published:2012-12 Issue: Volume:263 Page:626-632
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Mutzke A.,Rai A.,Schneider R.,Angelin E.J.,Hippler R.

Funder

Deutsche Forschungsgemeinschaft (DFG) through Sonderforschungsbereich

University of Greifswald

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference11 articles.

1. The oxidation of surface layers during reactive ion etching of GaAs in CF2Cl2+O2 and O2 plasmas

2. W. Eckstein A. Mutzke, R. Schneider, R. Dohmen, SDTrimSP: Version 5.00. IPP, Report, (12/8), 2011.

3. Ion fluence dependence of the Si sputtering yield by noble gas ion bombardment

4. The altered layer formation during the reactive ion etching of GaAs in CF2Cl2+O2 plasma

5. Energy dependence of small silver clusters sputtered by 150keV ions

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