Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing-Reference-Cited by-同舟云学术

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Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing

Published:2012-12 Issue: Volume:263 Page:440-444
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lugo S.,Peña Y.,Calixto-Rodriguez M.,López-Mata C.,Ramón M.L.,Gómez I.,Acosta A.

Funder

Dra. Y. Peña

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference18 articles.

1. Energy bands of AgInS2in the chalcopyrite and orthorhombic structures

2. Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications;Shay,1975

3. Proc. 26th IEEE PVSC;Birkmire,1997

4. Electrical and optical properties of AgInS2

5. Growth and characterization of p-type AgInS2 crystals

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