Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

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Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy

Published:2007-05 Issue:14 Volume:253 Page:6185-6190
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

González-Posada Fernando,Bardwell Jennifer A.,Moisa Simona,Haffouz Soufien,Tang Haipeng,Braña Alejandro F.,Muñoz Elías

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors

3. Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

4. Cleaning of AlN and GaN surfaces

5. Plasma-induced damage to n-type GaN

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1. Effect of N2-H2 remote plasma nitridation temperature on surface properties of Te-doped GaSb crystals;Vacuum;2024-11

2. Performance evaluation of GaN etching using Cl2-based plasma with bias pulsing;Journal of Vacuum Science & Technology A;2024-06-18

3. A robust Ni/Au process and mechanism for p-type ohmic contact applied to GaN p-FETs;Journal of Alloys and Compounds;2024-03

4. Exploring the self-limiting atomic layer etching of AlGaN: A study of O2-BCl3 and chlorinate-argon systems;Journal of Vacuum Science & Technology A;2023-06-23

5. Depth profiling of AlN and AlxGa1−xN crystals by XPS using Al Kα and Ag Lα line excitation and Ar ion gas cluster ion source;Journal of Applied Physics;2023-01-17

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