1. The insulated gate rectifier: a new power switching device;Baliga,1982
2. Insulated gate bipolar transistor (IGBT) with a trench gate structure;Chang,1987
3. A 4500V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor;Kitagawa,1993
4. A comparison of emitter concepts for high voltage IGBTs;Bauer,1995
5. The super-junction insulated gate bipolar transistor optimization and modeling;Antoniou;IEEE Trans. Electron Devices,2010