Stochastic analysis of surface roughness models in quantum wires-Reference-Cited by-同舟云学术

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Stochastic analysis of surface roughness models in quantum wires

Published:2018-07 Issue: Volume:228 Page:30-37
ISSN:0010-4655
Container-title:Computer Physics Communications
language:en
Short-container-title:Computer Physics Communications

Author:

Nedjalkov Mihail,Ellinghaus Paul,Weinbub Josef^ORCID,Sadi Toufik,Asenov Asen,Dimov Ivan,Selberherr Siegfried

Funder

Austrian Science Fund (FWF)

EC SUPERAID7

Austrian Federal Ministry of Science, Research and Economy

National Foundation for Research, Technology and Development

Bulgarian Science Fund

Publisher

Elsevier BV

Subject

General Physics and Astronomy,Hardware and Architecture

Reference28 articles.

1. Simulation of “Ab Initio” Quantum Confinement Scattering in UTB MOSFETs Using Three-Dimensional Ensemble Monte Carlo

2. Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering

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1. Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems;Journal of Physics: Condensed Matter;2022-02-22

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3. Electromagnetic Coherent Electron Control;2021 IEEE Latin America Electron Devices Conference (LAEDC);2021-04-19

4. Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors;Materials;2019-01-02

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