Multiscale simulation of carbon nanotube devices-Reference-Cited by-同舟云学术

Multiscale simulation of carbon nanotube devices

Published:2009-05 Issue:4 Volume:10 Page:305-319
ISSN:1631-0705
Container-title:Comptes Rendus Physique
language:en
Short-container-title:Comptes Rendus Physique

Author:

Adessi C.,Avriller R.,Blase X.,Bournel A.,Cazin d'Honincthun H.,Dollfus P.,Frégonèse S.,Galdin-Retailleau S.,López-Bezanilla A.,Maneux C.,Nha Nguyen H.,Querlioz D.,Roche S.,Triozon F.,Zimmer T.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference63 articles.

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3. Carbon nanotubes as Schottky barrier transistors;Heinze;Phys. Rev. Lett.,2002

4. Field-modulated carrier transport in carbon nanotube transistors;Appenzeller;Phys. Rev. Lett.,2002

5. Ballistic carbon nanotube field-effect transistors;Javey;Nature,2003

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