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Structural analysis of the heat-treated 4H(6H)-SiC(0001)Si surface

  • Published:1997-02 Issue:2-3 Volume:371 Page:316-320
  • ISSN:0039-6028
  • Container-title:Surface Science
  • language:en
  • Short-container-title:Surface Science

Author:

Tsukamoto T.,Hirai M.,Kusaka M.,Iwami M.,Ozawa T.,Nagamura T.,Nakata T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

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4. Low-temperature, high-concentration laser doping of 4H-SiC for low contact resistance;Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV;2019-03-04

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