Family of the metal-induced Si(111)3×1 reconstructions with a top Si atom density of 4/3 monolayer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference43 articles.
1. Physics and electronics of the noble-metal/elemental-semiconductor interface formation: A status report
2. Study of the Si(111) 7 × 7 surface structure by alkali- metal adsorption
3. Comparison of the 3×1 reconstructions of the Si(111) surface induced by Li and Ag
4. Initial formation of the interface between a polar insulator and a nonpolar semiconductor: CaF2 on Si(111)
5. New results on the reaction of Si{111} with Mg
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1. Structural stability and electronic properties of alkaline-earth metal induced Si(111)-(3 × 2) surfaces;Physical Chemistry Chemical Physics;2018
2. Quintuple-period Si atomic wires with alternative double and triple modulations by metal: Mg/Si(557);Surface Science;2012-01
3. The model of the magnesium silicide phase (2/3√3×2/3√3 )-R30°on Si(111);Physics Procedia;2011
4. Imaging diffusion fields on a surface with multiple reconstructions: Ag/Si(111);New Journal of Physics;2010-10-13
5. Atomic and electronic structures of Ag/Si(100)-c(6×2) surface: A first-principles study;Surface Science;2010-08
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